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By the fault of ASML, the introduction of the next generation EUV-lithography will be delayed for three years

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Lithographically ultraviolet radiation (EUV) lithography (EUV) provided the ability to reduce transistors on semiconductor chips without further increase in the number of photoshop. Its introduction was delayed for several years relative to the initial deadlines, but now it becomes clear that the next generation EUV-lithography will also delay.

Image Source: ASML

As one of the permanent authors of Seeking Alpha Arne Verheyde (Arne Verheyde), TSMC and Samsung began to apply a lithograph with supervisor ultraviolet radiation relatively recently, as 7-nm and 5-nm technologies are developing, Intel has been stated on similar plans, although INTEL It was originally believed that this transition will begin in the framework of 32-nm technology. The laser wavelength used in lithographs was 193 nm (DUV), and within the EUV-lithography, it had to be reduced to 13.5 nm. Since the transition from DUV to EUV has been delayed, chip manufacturers were forced to first implement the so-called immersion lithography, which allowed to increase the refractive index from 1.0 to 1.35, and then seek to reduce the size of the transistors due to the use of a plurality of photoshop. As they grow, the quantity increased and costs, not to mention the level of marriage and the elongation of the production cycle.

In the first half of last decade, Intel, TSMC and Samsung as interested in the early development of EUV-lithography of customers, bought major ASML shares of several billion US dollars. The irony of fate, which has spent the most Intel, as a result, turned out to be among the catch-up, since the transition to the use of EUV-lithography is going to implement within the framework of mass production not earlier than the end of next year. Obviously, other ASML clients have mastered EUV lithography later than expected initially.

The next technological stage should be the transition to an EUV-lithograph with a high refractive index value (High-Na EUV). The fact is that a decrease in the length of the laser from 193 to 13.5 nm as part of migration with DUV reduced the refractive index value from 1.35 to 0.35. The transition to the next step in the development of EUV-lithography should raise this indicator to 0.55. This will provide a further decrease in the size of the transistors without an excessive increase in the number of photoshotles.

ASML, as noted, still on the January report conference, stated that it was delayed with the introduction of the new version of EUV at least three years. It was previously believed that the technology would be mastered by 2023, and now the introduction of the EUV version with a high refractive index value is postponed until 2025 or 2026. The industry has already experienced a delay in the introduction of the first generation of EUV, therefore, in this case, it will continue to compensate for the lack of progress from lithographic scanners by an increase in the number of photoshotles. For end users, this will mean that the value of the development of new technical processing in lithography will continue to increase. Actually, one scanner for working with High-Na EUV will cost approximately $ 300 million, but it will reduce the cost of snapping and accelerate the treatment of silicon plates. ASML in the current conditions will be able to make money on the sale of EUV equipment of the first generation. Only this year it is going to increase profile revenue by 30%.

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